Asymptotic Stability of Cohen–Grossberg BAM Neutral Type Neural Networks with Distributed Time Varying Delays

This paper is concerned with the problem of asymptotic stability of neutral type Cohen–Grossberg BAM neural networks with discrete and distributed time-varying delays. By constructing a suitable Lyapunov–Krasovskii functional (LKF), reciprocal convex technique and Jensen’s inequality are used to delay-dependent conditions are established to analysis the asymptotic stability of Cohen–Grossberg BAM neural networks with discrete and distributed time-varying delays. These stability conditions are formulated as linear matrix inequalities (LMIs) which can be easily solved by various convex optimization algorithms. Finally numerical examples are given to illustrate the usefulness of our proposed method.     

Big Data Framework for Zero-Day Malware Detection

Malware has already been recognized as one of the most dominant cyber threats on the Internet today. It is growing exponentially in terms of volume, variety, and velocity, and thus overwhelms the traditional approaches used for malware detection and classification. Moreover, with the advent of Internet of Things, there is a huge growth in the volume of digital devices and in such scenario, malicious binaries are bound to grow even faster making it a big data problem. To analyze and detect unknown malware on a large scale, security analysts need to make use of machine learning algorithms along with big data technologies. These technologies help them to deal with current threat landscape consisting of complex and large flux of malicious binaries. This paper proposes the design of a scalable architecture built on the top of Apache Spark which uses its scalable machine learning library (MLlib) for detecting zero-day malware. The proposed platform is tested and evaluated on a dataset comprising of 0.2 million files consisting of 0.05 million clean files and 0.15 million malicious binaries covering a large number of malware families over a period of 7 years starting from 2010.     

Non‐Volatile ReRAM Devices Based on Self‐Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets

2D nanomaterials have been actively utilized in non‐volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D‐stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re‐writable, bistable, transparent, and flexible solution‐processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single‐ or multi‐component‐based multilayers composed of positively charged GO (N‐GO(+) or NS‐GO(+)) with/without negatively charged GO(‐) using layer‐by‐layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi‐component active layer Au/[N‐GO(+)/GO(‐)]_n/Al/PES shows higher ON/OFF ratio of ≈10⁵ with switching voltage of ?1.9 V and higher retention stability (≈10⁴ s), whereas the device based on single component (Au/[N‐GO(+)]_n/Al/PES) shows ≈10³ ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi‐component‐based device are attributed to a higher coating surface roughness. The Au/[N‐GO(+)/GO(–)]_n/Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈10⁹) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO‐based solutions. It is found that the devices containing MnO₂ in the dielectric layer do not improve the ReRAM performance.     

Engineering Catalytically Active Sites by Sculpting Artificial Edges on MoS2 Basal Plane for Dinitrogen Reduction at a Low Overpotential

Engineering catalytically active sites have been a challenge so far and often relies on optimization of synthesis routes, which can at most provide quantitative enhancement of active facets, however, cannot provide control over choosing orientation, geometry and spatial distribution of the active sites. Artificially sculpting catalytically active sites via laser-etching technique can provide a new prospect in this field and offer a new species of nanocatalyst for achieving superior selectivity and attaining maximum yield via absolute control over defining their location and geometry of every active site at a nanoscale precision. In this work, a controlled protocol of artificial surface engineering is shown by focused laser irradiation on pristine MoS₂ flakes, which are confirmed as catalytic sites by electrodeposition of AuNPs. The preferential Au deposited catalytic sites are found to be electrochemically active for nitrogen adsorption and its subsequent reduction due to the S-vacancies rather than Mo-vacancy, as advocated by DFT analysis. The catalytic performance of Au-NR/MoS₂ shows a high yield rate of ammonia (11.43 × 10⁻⁸ mol s⁻¹ cm⁻²) at a potential as low as −0.1 V versus RHE and a notable Faradaic efficiency of 13.79% during the electrochemical nitrogen reduction in 0.1 m HCl.     

Triboelectric nanogenerator based on polyaniline nanorods incorporated PDMS composites through a facile synthetic route

Journal of Materials Science: Materials in Electronics - Triboelectric nanogenerators (TENG) open up a new technique for developing green power sources through effective harvesting and conversion...     

Hydrostatic Pressure Effect on Ga<Subscript>0.75</Subscript>Cr<Subscript>0.25</Subscript>As DMS: DFT Study

This paper studies the first-principles calculations of the effect of hydrostatic pressure on the structural, electronic and magnetic properties of Ga_0.75Cr_0.25As dilute magnetic semiconductor in zb (B3) phase. High-pressure behaviour of Ga_0.75Cr_0.25As has been investigated between 0 and 100 GPa. The calculations have been performed using DFT as implemented in code SIESTA using LDA + U as an exchange-correlation (XC) potential. The study of band structures shows half-metallic ferromagnetic nature with 100% spin polarization. Under application of external pressure, the valence band and conduction band are shifted from their positions which lead to modification of electronic structure.     

LDA + U Study of Induced Half Metallicity in Cr-Doped GaN

Half-metallic ferromagnetism in the Ga_{1 ? x}Cr _x N compound at different concentrations, x = 25, 12.5 and 6.25 %, have been investigated using density functional theory as implemented in code Spanish Initiative for Electronic Simulations with Thousands of Atoms (SIESTA) using LDA + U as exchange-correlation (XC) potential, to find out the possibility of new diluted DMSs. The outcomes reveal that transition metal atom (Cr) doping in GaN induces ferromagnetism. The 3d levels of the TM ion originate a half-metallic gap at the Fermi level in the majority spin channel for all concentrations. Moreover, diluted magnetic semiconductor compounds retain the half-metallic nature at all concentrations, i.e., x = 0.25, 0.125 and 0.0625, with 100 % spin polarization at the Fermi level (E _F). The total magnetic moment of these compounds is due to Cr-3d states, and the existence of a small magnetic moment on Ga and N, non-magnetic atoms, for all doping concentrations is a consequence of p-d hybridization of Cr-d and N-p states. The calculated values of s-d exchange constant N α and p-d exchange constant N βconfirm the ferromagnetic character of the Cr-doped GaN compound.     

Experimental and first-principles studies of BiVO4/BiV1-xMnxO4-y n-n+ homojunction for efficient charge carrier separation in sunlight induced water splitting

Though bismuth vanadate (BiVO₄) is extensively used as a photoactive material, its performance in harnessing solar energy is limited by ineffective separation of photo-excited charge carriers. We demonstrate here a concept of n-n⁺ homojunction of BiVO₄/BiV_1-xMn_xO_4-y, which improves its charge separation efficiency. Using first-principles theoretical calculations, we determine the effect of Mn substitution on oxygen vacancy formation energies and associated changes in the electronic structure of BiVO₄. Showing that Mn substitution pushes the Fermi level of BiVO₄ towards its conduction band, we predict that the associated enhanced bending of bands at the homojunction (BiVO₄/BiV_1-xMn_xO_4-y) facilitates efficient separation of charge carriers. With Mott-Schottky experiments, we verify the increased band bending at the n-n⁺ homojunction, and show that the maximum photocurrent density measured in a sample with n-n⁺ homojunction is ten times higher than that obtained of the pristine sample. Secondly, Mn substitution in BiVO₄ also reduces the oxygen vacancy formation energy, promoting higher concentration of O-vacancies, further enhancing the photoelectrochemical response.     

Essential Oil of <Emphasis Type="Italic">Artemisia scoparia</Emphasis> Inhibits Plant Growth by Generating Reactive Oxygen Species and Causing Oxidative Damage

We investigated the chemical composition and phytotoxicity of the essential oil extracted from leaves of Artemisia scoparia Waldst. et Kit. (red stem wormwood, Asteraceae). GC/GC-MS analyses revealed 33 chemical constituents representing 99.83% of the oil. The oil, in general, was rich in monoterpenes that constitute 71.6%, with β-myrcene (29.27%) as the major constituent followed by (+)-limonene (13.3%), (Z)-β-ocimene (13.37%), and γ-terpinene (9.51%). The oil and β-myrcene were evaluated in a dose–response bioassay under laboratory conditions for phytotoxicity against three weeds—Avena fatua, Cyperus rotundus, and Phalaris minor. A significant reduction in germination, seedling growth, and dry matter accumulation was observed in the test weeds. At the lowest treatment of 0.07 mg/ml Artemisia oil, germination was reduced by 39%, 19%, and 10.6% in C. rotundus, P. minor, and A. fatua, respectively. However, the inhibitory effect of β-myrcene was less. In general, a dose-dependent effect was observed and the growth declined with increasing concentration. Among the three weeds, the inhibitory effect was greatest on C. rotundus, so it was selected for further studies. We explored the explanation for observed growth inhibition in terms of reactive oxygen species (ROS: lipid peroxidation, membrane integrity, and amounts of conjugated dienes and hydrogen peroxide)-induced oxidative stress. Exposure of C. rotundus to Artemisia oil or β-myrcene enhanced solute leakage, indicating membrane disintegration. There were increased levels of malondialdehyde and hydrogen peroxide, indicating lipid peroxidation and induction of oxidative stress. We conclude that Artemisia oil inhibits plant root growth through generation of ROS-induced oxidative damage.     

Doping effects of Li–Sb content on the structure and electrical properties of [(Na0.5K0.5)1 − x(Li)x(Sb)x(Nb)1 − xO3] lead-free piezoelectric ceramics

Ceramic samples of [Na_0.5K_0.5]_1 ? x(Li)_x(Sb)_x(Nb)_1 ? xO₃ (NKNLS) (x = 0.04–0.06) were prepared by high temperature solid-state reaction method. X-ray diffraction analysis of the powder samples suggests the formation of a single-phase material with transformation from orthorhombic to tetragonal crystal structure with increase in Sb content. Dielectric studies show a diffuse phase transition about 100 °C and another phase ferroelectric–paraelectric transition at 330 °C. Polarization vs. electric field (P–E) hysteresis studies show maximum remanent polarization (Pr ～ 0.66 C m^?2) for composition x = 0.05. AC conductivity in the compound increases with increase in temperature which may be attributed due to oxygen vacancies and show negative temperature coefficient of resistance (NTCR) effect.